Originally Posted by provost
Thanks. How many chips did he have to bin to get the one that can OC to 4.7?
I am asking because I have seen some of his posts in another thread, and he mentioned something about it.
...asking myself as well whether it is worth upgrading from a fast SB-E to a IVY-E >>> or wait for Haswell-E ...for now, the best I can figure is that with a SB-E / DDR3 2666, you need between an extra 150MHz and 200MHz to compete in benches like Cinebench
...ALSO: ran across this last night by Raja from ROG Asus forum, who had binned 45 samples of 4960X (ES though) in a well-designed water-cooled setup http://rog.asus.com/forum/showthread.php?37494-RIVE-4930K-4.4-4.5Ghz-wall&p=312887&viewfull=1#post312887"All tested at DDR3-2133 with 16GB of memory. ...
Out of 45 tested:
1 sample managed 4.8GHz at 1.40V
9 samples managed 4.7GHz at 1.40V
21 samples managed 4.6GHz at 1.40V
13 samples managed 4.5GHz at 1.40V
1 sample managed 4.4GHz at 1.40V..."
...keeping in mind that these are ES version, I still think that the initial retail batch seem to bin in a similar fashion (AND YET react extremely well to sub-zero)...perhaps a C2 stepping is the way to go, but by the time that comes out, we will be that much closer to Haswell-E... .
Having worked extensively with a tri-gate Ivy 3770K, delidding it plus CL-U TIM, lapping etc did a lot to open up even further speed windows...delidding won't work with the soldered IHS on Ivy-E...but if you add this experience to the 'sub zero Ivy-E' high OCs compared to non sub-zero.....still sitting on the fence' re upgrade path