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[Xbit] Leading Memory Makers Show DDR4 Prototypes at ISSCC

post #1 of 51
Thread Starter 
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Quote:
Leading manufacturers of dynamic random access memory (DRAM), Hynix Semiconductor and Samsung Electronics, have demonstrated working DDR4 modules at the International Solid-State Circuits Conference (ISSCC).

Samsung's DDR4 DRAM module can achieve data transfer rates of 2133Gb/s at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent 30nm-class process technology, with speeds of up to 1.6Gb/s. When applied to a notebook, it reduces power consumption by 40% compared to a 1.5VDDR3 module.

Hynix's DDR4 device works at 2400MHz (2400Mb/s) and operates at a low voltage of 1.2V and processes up to 19.2GB/s of data per second with a 64-bit I/O.

At present it is expected that DDR4 will be massively adopted by mid-2014, but manufacturers will likely start volume manufacturing of the next-gen DRAM sometimes in 2013.

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post #2 of 51
So IB wont have ddr4? sigh
post #3 of 51
Quote:
Originally Posted by VoidByte View Post

So IB wont have ddr4? sigh

That was easily foreseen.
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post #4 of 51
AFAIK Haswell won't have DDR4 either.
     
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post #5 of 51
Thread Starter 
Quote:
Originally Posted by VoidByte View Post

So IB wont have ddr4? sigh

This was already well know. Even haswell will be DDR3.
 
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post #6 of 51
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post #7 of 51
Hynix drool.gif
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post #8 of 51
No info on timings ?

I'm sure they'll be low enough to be acceptable but I'd like a number.
Like DDR3 is more or less CL7 at 1333Mhz, CL8 at 1600 etc.

I wonder if DDR4 will be along the lines of CL12 at 2133Mhz, CL13 at 2400Mhz. That would make sense I guess.
Edited by Xenthos - 2/25/12 at 1:59am
post #9 of 51
ddr4 wont be seen until 2014
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post #10 of 51
Quote:
Originally Posted by Fr0sty View Post

ddr4 wont be seen until 2014
Quote:
but manufacturers will likely start volume manufacturing of the next-gen DRAM sometimes in 2013.
    
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