Originally Posted by GoneToPlaid
These are the same DIMMs I have - I can get them to run at 3200 by changing procODT to 80 ohms, and changing the CL timing to 18. I would also change the failcount to 5 to be safe. I think 3200 is on the edge of stability for me with these DIMMs, so if you have an issue, try 2933 as well.
They are dual rank DIMMs, probably Samsung E die as someone else mentioned. If I overclock them from 2667 settings with BCLK overclock, I can get lower CL timings. Hopefully the May BIOS update will make that unnecessary
Here's the data from Thaiphoon burner, as requested. Thes are actually B die, apparently.
Manufacturing Description Module Manufacturer: G.Skill
Module Part Number: F4-3400C16-16GTZ
DRAM Manufacturer: Samsung
DRAM Components: K4A8G085WB-BCPB
DRAM Die Revision / Lithography Resolution: B / 20 nm
Module Manufacturing Date: Undefined
Module Manufacturing Location: Taipei, Taiwan
Module Serial Number: 00000000h
Module PCB Revision: 00h