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[EXP] Samsung Announce First DDR4 RAM - Page 4

post #31 of 104
Samsung announced that it has developed world fist DDR4 memory, which is based on the 30nm manufacturing process. Model of memory running at 2133MHz DDR4 working voltage of 1.2V. In addition, it uses 30nm manufacturing process and capacity up to 2GB. What more importantly, it uses peroxidase (pseudo open drain) technology to reduce energy consumption 40%, while the 1.5V of DDR3 memory modules.
post #32 of 104
OMG i only just went onto DDR3 last week
:3
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:3
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post #33 of 104
Quote:
Originally Posted by DuckieHo View Post
Which would provide very little benefit....


Memory will be needing less than 3w per GB and it is a steady voltage. You don't need adaptive voltage for power savings.

Therefore, you don't need that advance PWM for RAM.
True, but if you drop below 1V you will need to do conditioning to have very little voltage ripple. some large caps to make a large filter? I dont know what the accepted tolerance on ripple is for DDR3 but if it drops lower that will need to be addressed.
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post #34 of 104
How do they know it works?
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post #35 of 104
Quote:
Originally Posted by Nautilus View Post
I wonder what platform and CPU they're using to test, plug in these modules... Certainly no motherboard or chipset supports DDR4 today. Maybe Intel supplied ES board and CPU for Samsung?
Samsung doesn't need Intel to test....

It is just RAM... maintain a charge. Send a write command. Send a read command. Check results. Do it faster now.

Intel isn't the only company that develops memory controllers (but they are the biggest factor in DDR).

Quote:
Originally Posted by Magus2727 View Post
True, but if you drop below 1V you will need to do conditioning to have very little voltage ripple. some large caps to make a large filter? I dont know what the accepted tolerance on ripple is for DDR3 but if it drops lower that will need to be addressed.
Why is 1V a threshold for anything?

Since these need less power, smaller or the same sized caps could be used.



Quote:
Originally Posted by chadamir View Post
How do they know it works?
By testing it?
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post #36 of 104
Quote:
Originally Posted by DuckieHo View Post
Samsung doesn't need Intel to test....

It is just RAM... maintain a charge. Send a write command. Send a read command. Check results. Do it faster now.

Intel isn't the only company that develops memory controllers (but they are the biggest factor in DDR).


Why is 1V a threshold for anything?

Since these need less power, smaller or the same sized caps could be used.




By testing it?
I see now. Thank you. Where in NJ are you from?
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post #37 of 104
Quote:
Originally Posted by DuckieHo View Post

Why is 1V a threshold for anything?

Since these need less power, smaller or the same sized caps could be used.
its not, but as you get lower in control voltage crosstalk, ripple, variation, the gap between a 1 for high and 0 for low (TTL voltage at 1.5V is about 1.5V to 0.8V s high 0.35V to 0.0V is low). I could have a higher volatge of ripple or noise on the line and the TTL will still work. As the voltage drops that same noise would cause un intented high or low.

Its just with lower voltage noise, crosstalk, and ripple beome a larger factor that are sometimes difficult to over come.
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post #38 of 104
Quote:
Originally Posted by Magus2727 View Post
its not, but as you get lower in control voltage crosstalk, ripple, variation, the gap between a 1 for high and 0 for low (TTL voltage at 1.5V is about 1.5V to 0.8V s high 0.35V to 0.0V is low). I could have a higher volatge of ripple or noise on the line and the TTL will still work. As the voltage drops that same noise would cause un intented high or low.

Its just with lower voltage noise, crosstalk, and ripple beome a larger factor that are sometimes difficult to over come.
Don't forget that advancement through the various DDR generations isn't just about voltage.... there are topology and design changes.


DDR does use differential signalling which helps compensates for jitter/skew.

There are various advance techniques to counter electrical effects. Here's an excellent article on the topic:

http://www.bit-tech.net/hardware/mem...emory_part_3/1
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post #39 of 104
Quote:
Originally Posted by DuckieHo View Post
Don't forget that advancement through the various DDR generations isn't just about voltage.... there are topology and design changes.


DDR does use differential signalling which helps compensates for jitter/skew.

There are various advance techniques to counter electrical effects. Here's an excellent article on the topic:

http://www.bit-tech.net/hardware/mem...emory_part_3/1
Thanks I will read up on that.
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post #40 of 104
I'm not seeing how DDR4 would be mainstream. DDR2 compared to DDR3 is pretty much the same unless you use synthetic benchmarks. DDR3 prices are lower than ever right now I got 8 GB for about $80.
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