Samsung Electronics Co., Ltd, a global leader in advanced semiconductor technology solutions, announced today that it started the industryâ€™s first production of four gigabit (Gb), low power double-data-rate 2 (LPDDR2) DRAM using 30 nanometer (nm) class* technology earlier this month. The mobile DRAM chip will help the market to deliver thinner, lighter smartphones, tablets and other mobile devices, with longer battery life, at a level unachievable until now.
â€œMass production of 4Gb LPDDR2 is a tremendous advancement for the mobile industry, one that will enable our OEM customers to move quickly in launching better differentiated high-performance mobile devices into the market,â€ said Wanhoon Hong, executive vice president, memory sales & marketing, Samsung Electronics. â€œSamsung will continue to take the initiative in accelerating growth of the market by providing high-performance, high-density green memory products as often and as early as possible.â€
Samsung developed the 4Gb LPDDR2 DRAM in December of last year and began mass producing it earlier this month. Compared to the previous 40nm-class* 2Gb LPDDR2 DRAM, the 30nm-class 4Gb LPDDR2 DRAM increases productivity by 60 percent.
The new chip also combines high performance and energy efficiency. It delivers a data transmission speed of 1,066Mbps, which is more than double that of todayâ€™s MDDR, which operates between 333 to 400Mbps.
In addition, the chip enables a thinner, memory solution. When creating a 1GB (8Gb) LPDDR2 package with the previously highest density chips of 2Gb, four chips had to be stacked together. With the new 4Gb LPDDR2, stacking only two chips will achieve the same density, while providing a 20 percent package height reduction from 1.0mm to 0.8mm. It also consumes 25 percent less power.