Originally Posted by vulcan78
I was under the same impression! No improvement in performance (Firestrike) but about 5C higher temps (Unigine Heaven) and artifacts! Now that I think about it, I believe the artifacts were a side-effect of the primary GPU sitting at 92 C in Heaven! Dialing back Power Target from 160% to 106% brought primary temp down to 87C and hence less artifacts. I hate to think about what kind of temps my VRM's were seeing with the core at 92C; I've heard anything higher than say 85-90C on the VRM spells the death knell for GK110. I'm glad it was for only about 10-15 minutes total while I played around with the Power Target settings and did runs with both the side-panel on and off; I imagine playing Skyrim with 100+ mods and an ENB for hours on end with similar temperatures would just about cook your card in a few months time.
Absolutely. I added rather lengthy post-script edit to my post you quoted pertaining to the G10 AIO cooling solution. If youre running a card with a VRM cooling plate you'll probably want to have a look at the G10.
Read my articles:
"You can always choose with the slider what ever power target your card will have: Min 300W - Max 600W, my advice has always been to leave PT at default 300W = 100% and only increase it if you see stutters or frame drops!
As soon as you increase the slider and your card is power hungry, the voltage will allow more current into the card (THE AMOUNT ALWAYS DEPENDING ON THE SLIDER) and usually with stock air coolers (ACX as well) that are not capable of handling more than 350W of continued heat but to a much lesser extent a split second heat spike in the mosfets (VRM's)
! on top of that i see lots of people using kombustor, mining, oc scanner, occt etc without knowing exactly how those programs should be run
,( If anyone interested in mining with 780Ti, PM Gordan
for the safest settings) loading the card to an extreme generating more heat that the cooler can handle!
In RED the Power Mosfets (Actually DrMos Modules for High current DC-DC conversion) for core and Memory (U8-U13 = core, U98/U99 Memory)
(The problem with Mosfets is their tiny size, they generate huge amounts of heat and only have a very small size making it very difficult to dissipate all that heat effectively, if there is a heat spike, even with LN2 they just "blow"...)
In Yellow the Inductors (Current) [R22] for the core and [R33] for the memory
In BLUE the Capacitors (Voltage)
(An capacitor and inductor are similar in the way that a capacitor resists a change of a voltage and an inductor resists a change in current. The way how 'strong' they can resist depends on their value.)
In GREEN more Mosfets (4) and the NCP4206 Voltage controller 6 Phases
Unseen in the pic are: Memory voltage controller and the monitoring chip INA3221
ON AIR COOLING (STOCK COOLER, ACX, COOLER WITH LESS DISSIPATION THAN 350W
DON'T GO OVER:
With newer bios revisions: 300W x 120% PT = 360W
With older bios revisions: 330W x 110% PT= 363W
ANY BIOS REVISION: be extremely careful with anything over 450W!"The PT is the increase of TDP (thermal design power) which is determined by the chips maker (GK110 =250W) but this is not a fixed value, refers to the maximum amount of power the cooling system, in this case a chip, is required to dissipate. The TDP is typically not the most power the chip could ever draw, but the maximum power that it would draw when running "real applications". This ensures the chip will be able to handle essentially all applications without exceeding its thermal envelope, or requiring a cooling system for the maximum theoretical power.
"TDP is meant to be the wattage of the processor at load. I say "wattage" because it is unclear if this is meant to correspond most immediately to how much power is consumed in watts, or how much heat is produced in watts, but as near as I can tell the TDP is pretty much meant to indicate both" GL
(where C is capacitance, f is frequency and V is voltage)
Now, you dont have to make complicated calculus or anything like that because you have this chip here:
It monitors real-time voltage and power draw and its where AB/PrecisionX gets its hardware monitor readings from!
Stock bios come with 250W TDP (AKA PT) so when its at 100% you will have 250W of power draw, if you increase it to the max stock 106% youll get: 250x106%=265W
The same is with modded 300/400/500W bios what you see in AB or precisionX is the percentage above what you set!
Ex: with a 500W bios (Slider set to maximum of course) you see 60% usage, this equals to: 500x60%=300W
YOU CAN DIRECTLY CONTROL TDP WITH THE SLIDER!
Now, why has AB a 300% slider while PrecisionX uses 200% for the same bios with the same PT?
Well, AB and precision have different interfaces so the readings are different for the same thing, just keep in mind the base TDP value and make your calculations from there
It doesnt matter what the % slider is in any program, just increase it if you having stutters or frame drops and when making calculations always make them from the base TDP with my formula:
aW x b% = cW (a= bios base TDP, b= OSD TDP, c= aproximate power draw)
"...Voltage is just is the electrical potential for a circuit to do work, Current is the flow of electric charge and wattage is the rate at which energy is transferred by an electrical circuit. Typically wattage is measured by multiplying Amperage by Voltage! V * I = W
(“I” is the variable for current, or amperage, in electronics and physics. It stands for “Impetus”.)
When you set a higher power limit, you are allowing for more amperage to be drawn, but it doesnt mean ITS drawing that amperage as its just a upper limit you set with the slider!
It depends on the load the card has from the software its running! The more harsher it is the more power it draws, voltage only will allow more amperage to flow.
Conductor materials tend to increase their resistivity with an increase in temperature!
The reasons for these changes in resistivity can be explained by considering the flow of current through the material. The flow of current is actually the movement of electrons from one atom to another under the influence of an electric field. Electrons are very small negatively charged particles and will be repelled by a negative electric charge and attracted by a positive electric charge. Therefore if an electric potential is applied across a conductor (positive at one end, negative at the other) electrons will "migrate" from atom to atom towards the positive terminal.
Only some electrons are free to migrate however. Others within each atom are held so tightly to their particular atom that even an electric field will not dislodge them. The current flowing in the material is therefore due to the movement of "free electrons" and the number of free electrons within any material compared with those tightly bound to their atoms is what governs whether a material is a good conductor (many free electrons) or a good insulator (hardly any free electrons).
The effect of heat on the atomic structure of a material is to make the atoms vibrate, and the higher the temperature the more violently the atoms vibrate.
In a conductor, which already has a large number of free electrons flowing through it, the vibration of the atoms causes many collisions between the free electrons and the captive electrons. Each collision uses up some energy from the free electron and is the basic cause of resistance. The more the atoms jostle around in the material the more collisions are caused and hence the greater the resistance to current flow.
So to sum it up, we want lower temperatures which lead to lower electrical resistance, hence having less heat produced as waste and more power to our Titans/780´s cores to OC higher!
Exactly what happens depends on how excess the power is. It may be a sustained cooking. In this case, the MOSFET gets hot enough to literally unsolder itself. Much of the MOSFET heating at high currents is in the leads - which can quite easily unsolder themselves without the MOSFET failing! If the heat is generated in the chip, then it will get hot - but its maximum temperature is usually not silicon-restricted, but restricted by the fabrication. The silicon chip is bonded to the substrate by soft solder and it is quite easy to melt this and have it ooze between the epoxy and the metal of the body, forming solder droplets! Excess heat leads to short circuit! Usually, a MOSFET will fail short first. This is because excessive heat will, by diffusion, mix the dopants enough to create a good conductor instead of the p-n or n-p barriers that were there originally. Often, the gate oxide will be taken into the diffusion, too, causing a short between all three terminals.
Only if the short circuit current after this first mode of failure is high enough to blow the bond wires or the entire transistor, there is an open circuit.
The lower the temperature the better! My advice is always go water, that way your VRM's are roughly the same temperature as the core, max VRM's operating temperature is 85C (voltage controller, caps etc) on some parts and others( mosfets) 125C (Absolute MAX), so, hitting 80C on the core means that other VRM components are above spec temp and others and below!
Rule of the thumb in semi-conductors is 10C less doubles the elements life, also leakage current increases exponentially (leakage current doubles for every 8 to 10 °C increase in temperature). This is a very good reason to try to keep the operating temperature as low as possible!