Limited write (erase) cycles: Flash-memory cells will often wear out after 1,000 to 10,000 write cycles for MLC, and up to 100,000 write cycles for SLC[13], while high endurance cells may have an endurance of 1-5 million write cycles (many log files, file allocation tables, and other commonly used parts of the file system exceed this over the lifetime of a computer).[28] Special file systems or firmware designs can mitigate this problem by spreading writes over the entire device (so-called wear levelling), rather than rewriting files in place.[29] In 2008 wear levelling was just beginning to be incorporated into consumer level devices.[13] However, effective write cycles can be much less, because when a write request is made to a particular memory block, all data in the block is overwritten even when only part of the memory is altered. The write amplification, as referred by Intel, can be reduced using write memory buffer.[30] In combination with wear leveling, over-provisioning SSD flash drives with spared memory capacity also delays the loss of user-accessible memory capacity. NAND memory can be negatively impacted by read and program (write) disturbs arising from over accessing a particular NAND location. This overuse of NAND locations causes bits within the NAND block to erroneously change values. Wear leveling, by redirecting SSD writes to lesser-used NAND locations, thus reduces the potential for program or write disturbs.[31] An example for the lifetime of SSD is explained in detail in this wiki.[dubious - discuss] SSDs based on DRAM, however, do not suffer from this problem.
Limited write (erase) cycles: Flash-memory cells will often wear out after 1,000 to 10,000 write cycles for MLC, and up to 100,000 write cycles for SLC[13], while high endurance cells may have an endurance of 1-5 million write cycles (many log files, file allocation tables, and other commonly used parts of the file system exceed this over the lifetime of a computer).[28] Special file systems or firmware designs can mitigate this problem by spreading writes over the entire device (so-called wear levelling), rather than rewriting files in place.[29] In 2008 wear levelling was just beginning to be incorporated into consumer level devices.[13] However, effective write cycles can be much less, because when a write request is made to a particular memory block, all data in the block is overwritten even when only part of the memory is altered. The write amplification, as referred by Intel, can be reduced using write memory buffer.[30] In combination with wear leveling, over-provisioning SSD flash drives with spared memory capacity also delays the loss of user-accessible memory capacity. NAND memory can be negatively impacted by read and program (write) disturbs arising from over accessing a particular NAND location. This overuse of NAND locations causes bits within the NAND block to erroneously change values. Wear leveling, by redirecting SSD writes to lesser-used NAND locations, thus reduces the potential for program or write disturbs.[31] An example for the lifetime of SSD is explained in detail in this wiki.[dubious - discuss] SSDs based on DRAM, however, do not suffer from this problem.
Limited write (erase) cycles: Flash-memory cells will often wear out after 1,000 to 10,000 write cycles for MLC, and up to 100,000 write cycles for SLC[13], while high endurance cells may have an endurance of 1-5 million write cycles (many log files, file allocation tables, and other commonly used parts of the file system exceed this over the lifetime of a computer).[28] Special file systems or firmware designs can mitigate this problem by spreading writes over the entire device (so-called wear levelling), rather than rewriting files in place.[29] In 2008 wear levelling was just beginning to be incorporated into consumer level devices.[13] However, effective write cycles can be much less, because when a write request is made to a particular memory block, all data in the block is overwritten even when only part of the memory is altered. The write amplification, as referred by Intel, can be reduced using write memory buffer.[30] In combination with wear leveling, over-provisioning SSD flash drives with spared memory capacity also delays the loss of user-accessible memory capacity. NAND memory can be negatively impacted by read and program (write) disturbs arising from over accessing a particular NAND location. This overuse of NAND locations causes bits within the NAND block to erroneously change values. Wear leveling, by redirecting SSD writes to lesser-used NAND locations, thus reduces the potential for program or write disturbs.[31] An example for the lifetime of SSD is explained in detail in this wiki.[dubious - discuss] SSDs based on DRAM, however, do not suffer from this problem.
From
Wikipedia
The majority of lower-end cheap disks are MLC, and the more expensive ones are SLC.
I am not aware of any high-endurance consumer level drives out on the market right now, either.
